The driving force for electronics in the last half century has been the continuous scaling of transistors. Silicon transistors in a wide variety of devices are being replaced at molecular scales. While there are some similarities between nanoscale and microscale transistors, nanotransistors can behave in drastically different ways. Definite understanding of device physics at a nonameter scale is required to advance MOSFETs to their limits and to investigate devices that may accessorize or even supplant them at a molecular scale.

Jing Guo received a Ph.D. degree in electrical engineering from Purdue University in 2004, an M.S. degree in solid state electronics in 2000 and a B.S. degree in electronic engineering in 1998, both from Shanghai Jiao Tong University. He joined the University of Florida as an assistant professor in Aug. 2004. His research interests focus on modeling and simulation of new nanoscale devices with applications in electronics, optoelectronics, and energy conversion. He is a receipient of the National Science Foundation Faculty Early CAREER Award.